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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD402
DESCRIPTION *With TO-220C package *Complement to type 2SB547 *High breakdown voltage APPLICATIONS *Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO
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PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base
CONDITIONS
VALUE 200 150 5 2.0 3.0 1.5 20 150 -50~150
UNIT V V V A A A W
VEBO IC ICM IB PC Tj Tstg
Open collector
THERMAL CHARACTERISTICS
SYMBOL R7jc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SD402
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
50
A
IEBO
Emitter cut-off current
VEB=4V; IC=0
50
A
hFE
DC current gain
IC=0.4A ; VCE=10V
40
fT
Transition frequency
IC=0.4A ; VCE=10V
7
MHz
CC
Collector capacitance
IE=0 ; VCB=10V;f=1.0MHz
45
pF
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2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD402
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Fig.2 Outline dimensions (unindicated tolerance:0.10mm)
3


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